On the reliability of 1.3-µm InGaAsP/InP edge-emitting LED́s for optical-fiber communication

This study of the reliability of 1.3-μm double heterojunction edge-emitting LED's indicates that edge-emitting LED's mounted with Au 0.8 Sn 0.2 solder have an activation energy of 0.9 eV for degradation and extrapolated lifetimes of 2 \times 10^{8} h at room temperature. A study of 1.3-μm LED's grown by LPE and VPE show them to be comparable in operating life. The temperature dependence of the light output ( P ) of the edge-emitting LED's is given by P \alpha \exp ( -\Delta T/75 K). The study also showed that lattice mismatch up to 0.31 percent at the InGaAsP/InP heterojunction does not effect reliability.