An electro-thermal SPICE model for Reverse Conducting IGBT: Simulation and experimental validation

The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed approach is based on a quasi-2D formulation with the joint use of IGBT and PiN diode sub-circuits. Lateral currents paths and turn-on forward delay are considered into the model. Self-heating effect for both IGBT and diode regions is take into account, enabling reliable electro-thermal analysis. The model is calibrated to fit experimental data of a commercial 20 A–1.2 kV rated device. As a compelling example to prove the effectiveness of the model, the results of an electro-thermal simulation on a quasi-resonant converter are compared with experiments.