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Dry etcher design for 200 mm-diameter SiC wafer by using ClF 3 gas
Dry etcher design for 200 mm-diameter SiC wafer by using ClF 3 gas
2019
Ryohei Kawasaki
Hitoshi Habuka
Yoshinao Takahashi
Tomohisa Kato
Keywords:
Wafer
Etching
Composite material
Materials science
Correction
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