PN junction depth estimation method

The present invention provides a PN junction junction depth calculation method, the method comprising the steps of: one kind of the junction PN junction depth calculation method, the method comprising the steps of: a) measuring the sheet resistance well regions; b) a well formed in the junction region type field effect transistor, a gate voltage is changed and measuring the source-drain resistance; c) according to the measured sheet resistance of the source-drain resistance, and process parameters of the junction field effect transistor of the junction PN junction depth is calculated. Compared with the prior art, the technical solution of the present invention provides a deep electrical measurements to be PN junction by junction measure, simple, good repeatability.