Behavior of Defects Related to Interface-Stresses in Model Submicron Soi Structures

The origin and propagation of defects in novel submicron SOI structures have been investigated by transmission electron microscopy. The majority of the defect configurations observed could be explained in terms of dislocations generated as a result of stresses induced by the oxidation process. Dislocations were found to propagate into the silicon along particular {111} planes in conformity with stress-modelling. The examination of particular dislocation configurations allowed an estimation of the stresses at the silicon/ silicon dioxide interface. Defect densities were observed to depend on the geometry of the structures.