An Auger and electron energy‐loss study of reactions at the Ti‐SiO2 interface

In this paper, we use Auger electron spectroscopy and electron energy‐loss spectroscopy in order to investigate the room‐temperature formation of the Ti/SiO2 interface and its reactivity upon annealing. We perform anneals in the temperature range 200–900 °C for which the phenomena involved are discussed with respect to the Si oxide and Ti film thicknesses.