Suppressed boron penetration in P/sup +/-poly PMOSFETs with NO-nitrided SiO/sub 2/ gate dielectrics

Ultrathin NO-nitrided SiO/sub 2/ has been demonstrated to be a promising gate dielectric for dual-gate CMOS to alleviate the boron penetration problem in BF/sub 2/-implanted polysilicon gated p-MOSFETs. Results indicate that for both n/sup +/-poly n-MOSFETs and p/sup +/-poly p-MOSFETs, devices with NO-nitrided SiO/sub 2/ gate dielectrics exhibit superior electrical characteristics as well as device reliability as compared to those with control SiO/sub 2/.