A 65nm 1Gb 2b/Cell NOR Flash with 2.25MB/s Program Throughput and 400MB/s DDR interface

A 1.8V 1 Gb 2b/cell NOR flash memory is based on a time-domain voltage-ramp reading concept and designed in a 65nm technology. The program method, architecture and algorithm to reach 2.25MB/S programming throughput are presented. The read concept allows 70ns random access time and a 400MB/S sustained read throughput via a DDR interface