Isotopical ranges: 10,11B ion implantation in Si

Abstract SIMS depth profiling has been done on Si targets implanted with both 10 B and 11 ions at the same energy of 25 keV, 75 keV, 170 keV or 400 keV. Relative projected range differences could be determined with high accuracy. It was found that the projected range of 11 B exceeds that of 10 B and more pronounced so with higher energy. This observation is in broad agreement with the analytical theory, although a detailed comparison reveals minor but highly significant discrepancies. Consequences for the results of recently published NRA data on boron ranges in silicon will be discussed.