Ferroelectric properties of SrBi2Ta2O9 thin films on Si (100) with a LaZrOx buffer layer

To obtain a metal–ferroelectric–insulator–semiconductor (MFIS) structure, we fabricated ferroelectric SrBi2Ta2O9 (SBT) film on a p-type Si (100) wafer with a LaZrO x (LZO) buffer layer by means of a sol–gel technique. The sol–gel deposited LZO film according to the different annealing temperatures had a good surface morphology even though the crystalline phase was not an amorphous phase. In particular, the root-mean-squared (RMS) surface roughness of the 750-°C-annealed LZO film was about 0.365 nm and its leakage current density was about 8.2 × 10−7 A/cm2 at 10 V. A Au/SBT/LZO/Si structure with different SBT film was fabricated. The C–V characteristics of the Au/SBT/LZO/Si structure showed a clockwise hysteresis loop. The memory window width increased as the SBT film thickness increased. The 600-nm-thick SBT film was crystallized in a polycrystalline phase with a highly preferred (115) orientation. The memory window width of the 600-nm-thick SBT film was about 1.94 V at the bias sweep voltage ±9 V and the leakage current density was about 6.48 × 10−8 A/cm2 at 10 V.