Device and method for the simultaneous microstructuring, doping and semiconductor substrates

The invention relates to an apparatus and method for the simultaneous microstructuring, doping and semiconductor substrates with boron, wherein the semiconductor substrate is treated with a coupled in a liquid-jet laser beam, wherein the liquid jet comprises at least one boron compound. Use finds the inventive method in the field of solar cell technology as well as in other areas of semiconductor technology, in which a localized boron dopant has a meaning.