Oxygen-assisted synthesis of hBN films for resistive random access memories
2019
In this letter, we report an oxygen-assisted chemical vapor deposition method to synthesize uniform large-area high-quality multilayer hexagonal boron nitride (hBN) films (denoted by O-hBN). Nonvolatile bipolar resistive switching (RS) of resistive random access memories (RRAMs) based on O-hBN films is presented. These RRAMs exhibit enhanced RS performance with lower cycle-to-cycle variability, lower set voltage, and higher current on/off ratio. The enhancement is benefited from the clean and smooth surface of O-hBN films and the reduction of grain boundaries which serve as an energetically favored path for ion migration. This scalable approach to synthesize hBN films could facilitate practical applications of hBN-based RRAMs.In this letter, we report an oxygen-assisted chemical vapor deposition method to synthesize uniform large-area high-quality multilayer hexagonal boron nitride (hBN) films (denoted by O-hBN). Nonvolatile bipolar resistive switching (RS) of resistive random access memories (RRAMs) based on O-hBN films is presented. These RRAMs exhibit enhanced RS performance with lower cycle-to-cycle variability, lower set voltage, and higher current on/off ratio. The enhancement is benefited from the clean and smooth surface of O-hBN films and the reduction of grain boundaries which serve as an energetically favored path for ion migration. This scalable approach to synthesize hBN films could facilitate practical applications of hBN-based RRAMs.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
19
References
2
Citations
NaN
KQI