A Raman scattering study on the interface sharpness of InAs/AlSb/GaSb/AlSb polytype superlattices grown by molecular beam epitaxy

Abstract A Raman scattering study is performed for InAs/AlSb/GaSb/AlSb polytype superlattices grown by molecular beam epitaxy. To understand the unfavorable intermixing reaction at the heterointerface, the Raman signals are analyzed in conjunction with the MBE growth condition. For samples grown at low temperatures, it is confirmed that their heterointerfaces are sharply formed with a reasonable superlattice structure by analyzing the zone-folding and confinement effects of lattice vibrations in addition to the signals from the interface bond.