Liquid-phase epitaxy of GaAsZnSeGa2Se3 alloy crystals on a ZnSe substrate

Abstract The quaternary alloy crystals were grown from Ga solution saturated with ZnSe and GaAs using a slide boat in a sealed quartz ampoule. By decreasing the temperature from 900 to 860°C, the layer with about 60 μm thickness was grown on a ZnSe (0 0 1) substrate. Lattice-constant measurements and constituent analysis revealed that the composition of the grown layer was (3GaAs) x {(3ZnSe) 0.8 (Ga 2 Se 3 ) 0.2 } 1 − x .