Atomic-Layer Deposition of ZrO2 Thin Films Using New Alkoxide Precursors

Atomic layer deposition is a promising technique for the deposition of ZrO2 thin films for high-k gate dielectric applications. However, there are a number of problems associated with existing Zr precursors such as ZrCl4 and [Zr(OBut)4]. In this paper, we examine the ALD of ZrO2 using the new alkoxide complexes, [Zr(OBut)2(dmae)2], [Zr(OPr1)2(dmae)2] and [Zr(dmae)4] (dmae = [OCH2CH2NMe2]), and compare the results with data obtained using [Zr(OBut)4].