A method for the growth of semiconductor layers and supports for growing semiconductor layers

Disclosed is a method for the growth of semiconductor layers. In this case, in a step A, a carrier (1) is provided. In a step B, a substrate (2) on the support (1) is at least applied. Further, in a step C, a growth process is carried out in which a semiconductor layer sequence (20) facing away from a the support (1) main side of the substrate (2) is grown. The ready-grown semiconductor layer sequence (20) emitted in normal operation of electromagnetic radiation. In a further step D, a temperature measurement process is performed in which a temperature profile (3) of the substrate (2), which occurs during the growth in the substrate (2) is determined. In addition, a step E is executed in which the carrier (1) and / or the substrate (2) are selectively processed prior to or during the growth process. Characterized the temperature is changed in selected regions of the substrate (2) and a smoothed Emissionssprofil the fully grown semiconductor layer sequence (20).