The role of oxygen vacancies on the weak localization in LaNiO3-δ epitaxial thin films

Abstract We report on the analysis of weak localization observed in epitaxial films of LaNiO 3-δ deposited coherently on SrTiO 3 (001) substrates using different oxygen pressures, controlling thus the oxygen stoichiometry δ. The structural and transport properties of 10 nm thick LaNiO 3-δ films were investigated. In the films deposited under the lowest oxygen pressures, we observe localization effects at low temperatures, indicating first a high structural quality of the films, and second an influence of the growth conditions on the quantum transport properties of the nickelate. We will discuss the origin as well as the dimensionality of this effect, giving insight into novel and accurate strategies for the design of ultrathin LaNiO 3 electrodes for improved next generation electronics devices.