Ion-implanted HPGe detectors for multilayer spectrometers of charged particles

The results from development of planar HPGe detectors with thin (<0.1 μm) entrance windows produced by boron and phosphorus ion implantation are presented. These detectors are shown to have high electric and spectrometric characteristics. They have been designed for developing and updating the multilayer spectrometers that are currently used to study rare nuclear processes and to search for the deep states of xenon pionic atoms.