Nonmonotonic temperature dependence of the hall resistance of a 2D electron system in silicon

For a 2D electron system in silicon, the temperature dependence of the Hall resistance ρxy(T) is measured in a weak magnetic field in the range of temperatures (1–35 K) and carrier concentrations n where the diagonal resistance component exhibits a metallic-type behavior. The temperature dependences ρxy(T) obtained for different n values are nonmonotonic and have a maximum at Tmax ∼ 0.16TF. At lower temperatures T Tmax, the dependence ρxy(T) can be qualitatively explained by both the temperature dependence of the scattering time and the thermal activation of carriers from the band of localized states.