Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy
2017
Abstract The local structure of fluorine incorporated in crystalline germanium by ion implantation and annealing has been investigated by x-ray absorption near edge structure (XANES) spectroscopy. The XANES spectra of different F m V n complexes have been simulated by ab initio calculations and compared with the experimental spectrum. In our study, we show that most of the F in Ge forms F 6 V 2 complexes, lengthening the Ge–Ge distances in the close proximity.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
18
References
2
Citations
NaN
KQI