Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy

Abstract The local structure of fluorine incorporated in crystalline germanium by ion implantation and annealing has been investigated by x-ray absorption near edge structure (XANES) spectroscopy. The XANES spectra of different F m V n complexes have been simulated by ab initio calculations and compared with the experimental spectrum. In our study, we show that most of the F in Ge forms F 6 V 2 complexes, lengthening the Ge–Ge distances in the close proximity.