A Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Delayed Breakdown

This letter presents a low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switch with delayed breakdown. The actual optical energy contributing to switch triggering is studied with reference to the switching delay. When an optical pulse triggers the cathode of the 0.625-mm thick GaAs avalanche semiconductor switch biased at 5.2 kV, a delay time of 3.7 ns and a switching time of 258 ps are achieved, indicating a low-energy switch triggering energy of 5.6 nJ. The results of a 1-D simulation show good agreement with experimental voltage and optical waveforms.