Effect of Ni Doping on the Structure and Properties of Copper Nitride thin Films

Ni-doped copper nitride films were prepared on glass substrates by reactive radio magnetron sputtering method,and the effect of Ni doping on the structure、the electrical and the optical properties of the thin films were studied.The results show that:the films changes the(111) plane to lesser angles with the addition of Ni;With the increase of Ni-doped content,the electrical resistivity decreases from 1450×10-6Ω·cm to 184×10-6 Ω·cm,and the optical band gap increases from 1.09eV to 1.52eV.