Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE

Abstract The boron containing III/V-semiconductors (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P are grown by metal–organic-vapour-phase-epitaxy. The influence of growth conditions on maximum boron incorporation, boron incorporation efficiency and structural quality is investigated. A maximum boron concentration of 7.8% for (BGa)P and 9.9% for (BGa)(AsP) can be realized. Low growth temperature of 525 °C and high V/III-ratios are needed to increase the maximum boron concentration and to improve the structural quality. A difference in boron incorporation efficiency and maximum boron concentration between (BGa)As and (BGa)P is observed. The TBAs/V ratio in the gas phase is identified as the factor determining the boron incorporation efficiency in (BGa)(AsP). (BGaIn)P samples with an indium concentration of 53% and a maximum boron concentration of 4% are realized. The possibility to achieve boron concentrations of several percent in III/V-semiconductors offers new perspectives for strain engineering in devices like multi-junction solar cells or semiconductor lasers.