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GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C
GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C
2010
Medjdoub
Marcon
Derluyn
Cheng
Degroote
Vellas
Gaquière
Germain
Decoutere
Keywords:
Optoelectronics
High-electron-mobility transistor
Gallium nitride
Wide-bandgap semiconductor
Logic gate
Thermal stability
Silicon
Materials science
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