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MOVPE grown Ga(0.6)In(0.4)Sb photodiodes for 2.55 micron detection
MOVPE grown Ga(0.6)In(0.4)Sb photodiodes for 2.55 micron detection
1992
F. Pascal-Delannoy
J. Bougnot
G.G. Allogho
A. Giani
L. Gouskov
G. Bougnot
Keywords:
Optoelectronics
Quantum efficiency
Micrometre
Photodiode
Materials science
Metalorganic vapour phase epitaxy
Correction
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