Normally-off β-Ga2O3 Power MOSFET with Ferroelectric Charge Storage Gate Stack Structure

In this work, we have demonstrated normally-off $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm were achieved in Depletion (D–) and Enhancement (E–) mode device, respectively, which shows negligible current reduction. Steep subthreshold swing (SS) of 72 mV/dec and breakdown voltage of 670 V were also obtained in the E-mode MOSFET. Furthermore, after gate stess test of 10 V for 105 s was performed, the threshold voltage $({V}_{\textit {TH}})$ shift was 26.5 %. These electrical characteristics of the E-mode $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ MOSFET shows the great potential for future power switch application.