Effects of ZnO buffer layer on GZO RRAM devices

Abstract Ag/GZO/ZnO/Pt structure resistive switching devices were fabricated by radio frequency (RF) magnetron sputtering, in which ZnO was used as a buffer layer. These devices have large ratio of high resistance state (HRS) to low resistance state (LRS), which is 2 × 10 3 . The storage time measurement indicates that these devices have an excellent data retention characteristic. Moreover, the operation voltages are very low, which is 0.4 V (ON state) and −0.35/−0.55 V (OFF state). The electroforming process in initial state was not needed, and multistep reset process was found.