Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates

Abstract The application of the charge control model based on variational techniques for heterojunction structures such as the high electron mobility transistor (HEMT) has been demonstrated, indicating excellent agreement with the full numerical self-consistent model. The numerical calculations carried out were for pseudomorphic (PM) HEMTs on GaAs and strained-layer HEMTs on InP where in each case, the In mole fraction in the InGaAs channel was optimized.