Crystal growth of the (Ga 1−x In x ) 2 Se 3 , 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals

The phase diagram of the Ga 2 Se 3 -In 2 Se 3 system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ 2 phase with the compositions (Ga 0.6 In 0.4 ) 2 Se 3 and (Ga 0.594 In 0.396 Er 0.01 ) 2 Se 3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga 0.6 In 0.4 ) 2 Se 3 (R = 500 MΩ) and (Ga 0.594 In 0.396 Er 0.01 ) 2 Se 3 (R = 210 MΩ) was measured.