Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors

The dynamic properties of (Mg,Zn)O-based metal-semiconductor field-effect transistors (MESFETs) with the gate materials AgxO, PtOy, and Au were investigated. The AgxO-gated FETs exhibit the best static properties but are limited in their switching speed, probably due to Ag atoms present in the channel after diffusion during the transistor fabrication. Devices with PtOy and Au gates did not exhibit any significant delay in frequency-dependent gate lag measurements in the studied frequency range up to 1 MHz.