Electron cyclotron effective mass in indium nitride

We report on cyclotron effective mass measurement in indium nitride epilayers grown on c-sapphire, using the thermal damping of Shubnikov-de-Haas oscillations obtained in the temperature range 2–70 K and under magnetic field up to 60 T. We unravel an isotropic electron cyclotron effective mass equal to 0.062±0.002m0 for samples having electron concentration near 1018 cm−3. After nonparabolicity and polaron corrections we estimate a bare mass at the bottom of the band equal to 0.055±0.002m0.