semi-transparent photodetector pn junction structured

Photodetector (100) comprising: - a first layer (102) of semiconductor p-doped and a second layer (104) doped semiconductor n, together forming a pn adapted to be traversed junction by a first portion of the lengths of waves of a received light and to absorb and convert a second portion of the wavelengths of said light into an electric signal; - a dielectric material (109) transparent vis-a-vis of part of the wavelengths passing through the first layer and the second layer; wherein a plurality of portions (110) semiconductor or dielectric disjoint are such that an average distance between the centers of two adjacent portions is smaller than the smallest wavelength among those of the first part and the second part length wave.