Uniformity methods and systems for improving the SiGe thickness

The present invention discloses a method and a uniformity of the thickness of a system for improving SiGe. Using a process to form a protective layer to cover the pits between the two regions of the semiconductor material. In the etching process, pits are not protected by the protective layer is etched away and reduce silicon (Si) - loss of material shallow trench isolation (STI) substrate. Providing selective height covered to protect the substrate and the Si-STI interface of the Si-STI. To obtain the desired geometry having a uniform thickness for forming a silicon germanium (SiGe) layer in the vicinity of pits.