Analysis of electromigration effects within various types of aluminum test structures

Abstract Advances in integrated circuit fabrication technology over the past two decades have resulted in integrated circuits with smaller device dimensions and larger area and complexity. This evolution of technology highlights electromigration as a major reliability problem in silicon VLSI circuits. Emphasis is placed on the scope and detail of the electromigration test structures themselves, and on the analysis of electromigration effects within various types of aluminum test structures.