Resistive Switching Performance of RRAM Device with Stacked Solution-based Dielectric Layers

In this work, transparent Ag/GaOx/AlOx/ITO RRAM devices were fabricated with solution-based bilayer dielectric annealed at low temperature (250°C). All devices exhibited superior electrical performance such as low operation voltage in the SET process (~0.3 V), narrow resistance distribution, high ON/OFF ratio (-104), long retention time (>104 s) and good endurance property (>100 cycles). The performance of bilayer-dielectric RRAM devices suggested the great potential of application in the flexible electronics industry.