Transistor characteristics of a parallel-channel and a serial-channel superconducting flux flow transistor fabricated by the AFM anodization process

Abstract Superconducting flux flow transistors (SFFTs) with a parallel and serial channel were fabricated on superconducting thin films. A transistor pattern with a drain, source and channel was fabricated with conventional lithography, while a weak link between the source and the drain was fabricated with the AFM anodization process as a channel. The parallel and the serial channel SFFTs showed like-transistor characteristics that the drain voltage across a channel depended on the gate current. These characteristics were also simulated with numerical methods. This study describes a novel method to fabricate SFFTs with various channels by the AFM anodization process.