Advanced nanofabrication and its application to nano phase-change memory for reducing writing current

In this work, we studied the advanced nanofabrication technologies including electron beam lithography, blockcopolymer-based self assembly fabrication and their combination lithography, that is, directed self assembly (DSA). Nanostructures with a size of 10 nm order were successfully fabricated using these technologies. We attempted to further incorporate these nanostructures fabricated by these advanced technologies into phase-change memory to reduce writing current. It was revealed that the novel PCM could have only about 1/10 writing current of conventional one.