Off-state current behaviors of 28nm-node nMOSFETs under negative gate bias

The off-state current of MOSFETs under 28nm-node or beyond seems more important than before to keep the long-time operation for mobile electronic products. In this study, we focus on two parts to expose the off-state current behaviors for 28nm nMOSFETs: the drain current under the negative gate bias and the leakage mechanisms of whole devices in off-state, coming from DIBL, GIDL and punch-through effects. Rating the contribution of these three factors and in different channel lengths, DPN nitrogen concentrations and annealing temperatures is chiefly focused