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H 2 O 2 : HF : C 4 O 6 H 6 ( Tartaric Acid ) : H 2 O Etching System for Chemical Polishing of GaSb
H 2 O 2 : HF : C 4 O 6 H 6 ( Tartaric Acid ) : H 2 O Etching System for Chemical Polishing of GaSb
1995
I. E. Berishev
F. de Anda
V. A. Mishournyi
J. Olvera
N. D. Ilyinskaya
V. I. Vasilyev
Keywords:
Chemistry
C-4
Inorganic chemistry
Polishing
Etching
Tartaric acid
Correction
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