Static induction thyristor

The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state. It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds. The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state. It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds. The first static induction thyristor was invented by Japanese engineer Jun-ichi Nishizawa in 1975. Back then, it was capable of conducting large currents with a low forward bias and turn-off quickly. It had a self controlled gate turn-off thyristor that was commercially available through Tokyo Electric Co. (now Toyo Engineering Corporation) in 1988. The initial device used to consist of p+nn+ diode and a buried p+ grid. In 1999 a PSPICE circuit simulator was implemented into SITh. In 2010 a newer version of SIT was developed by Zhang Caizhen, Wang Yongshun, Liu Chunjuan and Wang Zaixing the new feature of which was high forward blocking voltage.