Organic photorefractive materials

Organic photorefractive materials are materials that exhibit a temporary change in refractive index when exposed to light. The changing refractive index causes light to change speed throughout the material and produce light and dark regions in the crystal. The buildup can be controlled to produce holographic images for use in biomedical scans and optical computing. The ease with which the chemical composition can be changed in organic materials makes the photorefractive effect more controllable. Organic photorefractive materials are materials that exhibit a temporary change in refractive index when exposed to light. The changing refractive index causes light to change speed throughout the material and produce light and dark regions in the crystal. The buildup can be controlled to produce holographic images for use in biomedical scans and optical computing. The ease with which the chemical composition can be changed in organic materials makes the photorefractive effect more controllable. Although the physics behind the photorefractive effect were known for quite a while, the effect was first observed in 1967 in LiNbO3. For more than thirty years, the effect was observed and studied exclusively in inorganic materials, until 1990, when a nonlinear organic crystal 2-(cyclooctylamino)-5-nitropyridine (COANP) doped with 7,7,8,8-tetracyanoquinodimethane (TCNQ) exhibited the photorefractive effect. Even though inorganic material-based electronics dominate the current market, organic PR materials have been improved greatly since then and are currently considered to be an equal alternative to inorganic crystals. There are two phenomena that, when combined together, produce the photorefractive effect. These are photoconductivity, first observed in selenium by Willoughby Smith in 1873, and the Pockels Effect, named after Friedrich Carl Alwin Pockels who studied it in 1893. Photoconductivity is the property of a material that describes the capability of incident light of adequate wavelength to produce electric charge carriers. The Fermi level of an intrinsic semiconductor is exactly in the middle of the band gap. The densities of free electrons n in the conduction band and free holes h in the valence band can be found through equations: n = N c e − ( E c − E F ) k B T {displaystyle n=N_{c}{frac {e^{-(E_{c}-E_{F})}}{k_{B}T}}}