Franz–Keldysh effect

The Franz–Keldysh effect is a change in optical absorption by a semiconductor when an electric field is applied. The effect is named after the German physicist Walter Franz and Russian physicist Leonid Keldysh (nephew of Mstislav Keldysh). The Franz–Keldysh effect is a change in optical absorption by a semiconductor when an electric field is applied. The effect is named after the German physicist Walter Franz and Russian physicist Leonid Keldysh (nephew of Mstislav Keldysh). Karl W. Böer observed first the shift of the optical absorption edge with electric fields during the discovery of high-field domains and named this the Franz-effect. A few months later, when the English translation of the Keldysh paper became available, he corrected this to the Franz–Keldysh effect. As originally conceived, the Franz–Keldysh effect is the result of wavefunctions 'leaking' into the band gap. When an electric field is applied, the electron and hole wavefunctions become Airy functions rather than plane waves. The Airy function includes a 'tail' which extends into the classically forbidden band gap. According to Fermi's golden rule, the more overlap there is between the wavefunctions of a free electron and a hole, the stronger the optical absorption will be. The Airy tails slightly overlap even if the electron and hole are at slightly different potentials (slightly different physical locations along the field). The absorption spectrum now includes a tail at energies below the band gap and some oscillations above it. This explanation does, however, omit the effects of excitons, which may dominate optical properties near the band gap. The Franz–Keldysh effect occurs in uniform, bulk semiconductors, unlike the quantum-confined Stark effect, which requires a quantum well. Both are used for electro-absorption modulators. The Franz–Keldysh effect usually requires hundreds of volts, limiting its usefulness with conventional electronics – although this is not the case for commercially available Franz–Keldysh-effect electro-absorption modulators that use a waveguide geometry to guide the optical carrier. The absorption coefficient is related to the dielectric constant (especially the complex term). From Maxwell's equation, we can easily find out the relation, We will consider the direct transition of an electron from the valence band to the conduction band induced by the incident light in a perfect crystal and try to take into account of the change of absorption coefficient for each Hamiltonian with a probable interaction like electron-photon, electron-hole, external field. These approach follows from. We put the 1st purpose on the theoretical background of Franz–Keldysh effect and third-derivative modulation spectroscopy. H = 1 2 m ( p + e A ) 2 + V ( r ) {displaystyle H={1 over 2m}(mathbf {p} +emathbf {A} )^{2}+V(r)} (A: vector potential, V(r): periodic potential) A = 1 2 A 0 e [ e i ( k p ⋅ r − ω t ) + e − i ( k p ⋅ r − ω t ) ] {displaystyle A={1 over 2}A_{0}e} (kp and e are the wave vector of em field and unit vector.) Neglecting the square term A 2 {displaystyle A^{2}} and using the relation A ⋅ p = p ⋅ A {displaystyle Acdot p=pcdot A} within the Coulomb gauge ∇ ⋅ A = 0 {displaystyle abla cdot A=0} , we obtain