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Bipolar transistor biasing

Bipolar transistor amplifiers must be properly biased to operate correctly. In circuits made with individual devices (discrete circuits), biasing networks consisting of resistors are commonly employed. Much more elaborate biasing arrangements are used in integrated circuits, for example, bandgap voltage references and current mirrors. The voltage divider configuration achieves the correct voltages by the use of resistors in certain patterns. By selecting the proper resistor values, stable current levels can be achieved that vary only little over temperature and with transistor properties such as β. Bipolar transistor amplifiers must be properly biased to operate correctly. In circuits made with individual devices (discrete circuits), biasing networks consisting of resistors are commonly employed. Much more elaborate biasing arrangements are used in integrated circuits, for example, bandgap voltage references and current mirrors. The voltage divider configuration achieves the correct voltages by the use of resistors in certain patterns. By selecting the proper resistor values, stable current levels can be achieved that vary only little over temperature and with transistor properties such as β. The operating point of a device, also known as bias point, quiescent point, or Q-point, is the point on the output characteristics that shows the DC collector–emitter voltage (Vce) and the collector current (Ic) with no input signal applied. For analog operation of a class-A amplifier, the Q-point is placed so the transistor stays in active mode (does not shift to operation in the saturation region or cut-off region) when input is applied. For digital operation, the Q-point is placed so the transistor does the contrary – switches from the 'on' (saturation) to the 'off' (cutoff) state. Often, the Q-point is established near the center of the active region of a transistor characteristic to allow similar signal swings in positive and negative directions.

[ "Bipolar junction transistor", "Field-effect transistor", "Threshold voltage", "Heterostructure-emitter bipolar transistor", "Multiple-emitter transistor" ]
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