N. C. Quach

Swiss Federal Laboratories for Materials Science and Technology

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Arnaud Etchéberry

Université de Versailles Saint-Quentin-en-Yvelines

Patrik Schmutz

Swiss Federal Laboratories for Materials Science and Technology

Nathalie Simon

Centre National de la Recherche Scientifique

Isabelle Gérard

Institut Lavoisier de Versailles

Anne-Marie Gonçalvès

Institut Lavoisier de Versailles

Olga Guseva

University of Cape Town

Daniel Reiss

University of Michigan–Ann Arbor

Pierre Tran Van

Renault (France)

Peter J. Uggowitzer

Montanuniversität Leoben

Cooperative Institutions

Institut Lavoisier de Versailles

Université de Versailles Saint-Quentin-en-Yvelines

Centre National de la Recherche Scientifique

Université Paris-Saclay

Swiss Federal Laboratories for Materials Science and Technology

ETH Zurich

École Polytechnique Fédérale de Lausanne

Institut Photovoltaïque d’Île-de-France

Institut national de l’information géographique et forestière

Board of the Swiss Federal Institutes of Technology

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Corrosion behaviour of an Mg–Y–RE alloy used in biomedical applications studied by electrochemical techniques

Comptes Rendus Chimie (2008)

N. C. Quach Peter J. Uggowitzer Patrik Schmutz

Simulated body fluid

Immersion

Biocompatibility

10.1016/j.crci.2008.06.007

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Citations (70)

Electrochemical Characterization of corrosion mechanisms on Mg-Y-RE alloy in "biological Revelant" Environments

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2008)

N. C. Quach Patrik Schmutz

Abstract not Available.

Characterization

10.1149/ma2008-02/14/1474

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Citations (0)

"Combinatorial" Electrochemical and Surface Oxidation Properties Characterization of Al-Cu-Fe PVD Gradient Coatings

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2008)

N. C. Quach Daniel Reiss Olga Guseva Patrik Schmutz

Abstract not Available.

Characterization

10.1149/ma2008-02/17/1558

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Citations (0)

Cathodic Behavior of n-InP Modified by a Thin Anodic Oxide

Journal of The Electrochemical Society (2004)

N. C. Quach Nathalie Simon Isabelle Gérard Pierre Tran Van Arnaud Etchéberry

Anodic oxides grown on n-InP under applied potential and illumination exhibit important blocking properties against hole transfer from the valence band. In this work we focus our attention on the blocking properties of these anodic oxides against electron transfer from the conduction band. Therefore, electron transfer which occurs during the characteristic cathodic reaction, i.e., hydrogen formation associated with semiconductor decomposition, has been studied for photo-oxidized surfaces. The cathodic behavior of n-InP previously photo-oxidized is compared to the behavior of a nonoxidized semiconductor surface. Our purpose is to study both the anodic oxide blocking properties and how the cathodic decomposition of anodic oxide-covered surfaces is modified. This work points out a complex cathodic behavior for electrodes covered with oxides. Two stages are distinguished. During the first stage of cathodic process, anodic oxide decomposition is the only reaction which takes place at the semiconductor interface. This reaction occurs with an overpotential evidencing the presence of an energetic barrier in anodic oxide. Then, when the anodic oxide is completely decomposed, a second stage occurs corresponding both to the cathodic decomposition of the semiconductor and to evolution. © 2004 The Electrochemical Society. All rights reserved.

Overpotential

10.1149/1.1690783

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Citations (3)

Growth of Anodic Oxides on n-InP Studied by Electrochemical Methods and Surface Analyses

Journal of The Electrochemical Society (2007)

Nathalie Simon N. C. Quach Anne‐Marie Gonçalves Arnaud Etchéberry

Growth, formation, and stability of anodic oxides obtained on were investigated by coupling electrochemical methods and X-ray photoelectron spectroscopy (XPS) analyses. Photocurrent transients and capacitance measurements performed before and after the semiconductor surface oxidation exhibit new electrical interfacial properties, whereas XPS analysis gives access to chemical composition and estimation of oxide layer thickness. In this work, using a galvanostatic method, oxidation of the surface has been studied at pH 9 for two current densities: 0.2 and . Using transient photocurrent and Mott–Schottky behavior as in situ probes, we have pointed out several steps for the oxidation process, correlated to a gradual oxide coverage which is evidenced by XPS characterization. The current density chosen to perform the oxidation governs the resulting chemical composition, texture, and electrical properties of the oxide. For low current density, the anodic mechanism varies progressively from a pure semiconductor oxidation process to a solvent oxidation contribution. For high current density, this trend disappears whereas semiconductor oxidation continues to take place.

Photocurrent

10.1149/1.2709504

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Citations (20)

Transient photocurrent as a probe to follow n-InP oxidation

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2003)

N. C. Quach Isabelle Gérard Nathalie Simon Arnaud Etchéberry

Photocurrent

Transient (computer programming)

Coulometry

10.1002/pssc.200306231

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Citations (3)