S. P. Moshchenko

Institute of Semiconductor Physics

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L. V. Litvin

Raith (Germany)

V. G. Mansurov

Institute of Semiconductor Physics

Yu. G. Galitsyn

Institute of Semiconductor Physics

A. I. Toropov

Institute of Semiconductor Physics

АА

А. А. Быков

Novosibirsk State University

A. A. Lyamkina

Institute of Semiconductor Physics

Yu. V. Nastaushev

Institute of Semiconductor Physics

ДВ

Д. В. Дмитриев

Institute of Semiconductor Physics

V. P. Migal’

National Aerospace University – Kharkiv Aviation Institute

E. B. Ol'Shanetskiǐ

Institute of Semiconductor Physics

Cooperative Institutions

Institute of Semiconductor Physics

Russian Academy of Sciences

Siberian Branch of the Russian Academy of Sciences

Novosibirsk State University

Centre National de la Recherche Scientifique

City University of New York

Schott (Germany)

Technical University of Munich

Laboratoire National des Champs Magnétiques Intenses

Institut National des Sciences Appliquées de Toulouse

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The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface

Nanoscale Research Letters (2010)

A. A. Lyamkina Д. В. Дмитриев Yu. G. Galitsyn VG Kesler S. P. Moshchenko

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

Deposition

10.1007/s11671-010-9790-z

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Citations (10)

Influence of localized surface plasmon in a lens-shaped metal cluster on the decay dynamics of a point-dipole emitter

Journal of Quantitative Spectroscopy and Radiative Transfer (2015)

A. A. Lyamkina S. P. Moshchenko

Localized surface plasmon

Discrete dipole approximation

10.1016/j.jqsrt.2015.01.018

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Citations (2)

Quasiballistic electronic interferometer

JETP Letters (1993)

А. А. Быков Z. D. Kvon E. B. Ol'Shanetskiǐ L. V. Litvin Yu. V. Nastaushev

Solid-state physics

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Citations (9)

Aharonov-Bohm effect in a quasiballistic electronic interferometer in a transverse electrostatic field

JETPL (1995)

А. А. Быков L. V. Litvin S. P. Moshchenko

Aharonov–Bohm effect

Electrostatics

Transverse field

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Monolithically integrated single quantum dots coupled to bowtie nanoantennas

Optics Express (2016)

A. A. Lyamkina K. Schraml Armin Regler Martin Schalk A. K. Bakarov

Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter coupling of single near-surface ($<10\,nm$) InAs quantum dots monolithically integrated into electromagnetic hot-spots of sub-wavelength sized metal nanoantennas. The antenna strongly enhances the emission intensity of single quantum dots by up to $\sim16\times$, an effect accompanied by an up to $3.4\times$ Purcell-enhanced spontaneous emission rate. Moreover, the emission is strongly polarised along the antenna axis with degrees of linear polarisation up to $\sim85\,\%$. The results unambiguously demonstrate the efficient coupling of individual quantum dots to state-of-the-art nanoantennas. Our work provides new perspectives for the realisation of quantum plasmonic sensors, step-changing photovoltaic devices, bright and ultrafast quantum light sources and efficent nano-lasers.

10.1364/oe.24.028936

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Citations (16)

Plasmon-assisted mechanism of coupling in ensembles of quantum dots

Materials Today Proceedings (2017)

A. A. Lyamkina S. P. Moshchenko

10.1016/j.matpr.2017.09.004

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High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Journal of Crystal Growth (2011)

A. A. Lyamkina D. S. Abramkin Д. В. Дмитриев D. V. Gulyaev A.K. Gutakovsky

Wetting layer

10.1016/j.jcrysgro.2011.10.011

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Citations (2)

Plasmonic Antenna for Bright NV Centers in Ultradispersed Detonation Diamonds

Anna A. Lyamkina Sergey P. Moshchenko Yu. G. Galitsyn Alexey I. Lyamkin Анна А. Лямкина

In this work we present a theoretical analysis of plasmon nanoantennas for a diamond cluster containing a bright NV center. The results are obtained by the numerical simulations using the discrete dipole approximation. A gold shell around the diamond core is considered as antenna. It is shown that by varying the size of the nanodiamond core and the thickness of the gold shell the position of the plasmon resonance can be tuned to the emission of a NV center. A resonator shaped as a droplet-like metal cluster is proposed. It provides the selectivity of the radiation polarization that is required for applications in quantum informatics.

Nanodiamond

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Coherent properties of in-plane gated InGaAs/AlGaAs submicron rings

Surface Science (1996)

А. А. Быков L. V. Litvin S. P. Moshchenko

Mesoscopic physics

10.1016/0039-6028(96)00525-0

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Citations (15)

Quasiballistic quantum interferometer