N.Q. Lam

Argonne National Laboratory

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P.R. Okamoto

Argonne National Laboratory

H. Wiedersich

Argonne National Laboratory

James F. Stubbins

University of Illinois Urbana-Champaign

L.E. Rehn

Argonne National Laboratory

Ram Devanathan

Pacific Northwest National Laboratory

L. J. Nowicki

Argonne National Laboratory

H. A. Hoff

University of Bonn

J. K. Heuer

Universität Hamburg

M.J. Sabochick

U.S. Air Force Institute of Technology

S. J. Rothman

Technical University of Denmark

Cooperative Institutions

Argonne National Laboratory

Hokkaido University

University of Illinois Urbana-Champaign

U.S. Air Force Institute of Technology

Northwestern University

Los Alamos National Laboratory

Oak Ridge National Laboratory

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Lawrence Berkeley National Laboratory

Wright-Patterson Air Force Base

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Effects of proton bombardment on self-diffusion in silver: A preliminary report

Thin Solid Films (1975)

N.Q. Lam S. J. Rothman K. L. Merkle L. J. Nowicki D. Dever

Self-diffusion

10.1016/0040-6090(75)90252-7

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Citations (14)

Bombardment-Induced Amorphization in WO₃ and its Use in Deducing Mean Damage Ranges (Studies on Bombardment-Induced Disorder. VI)

Canadian Journal of Physics (1972)

N.Q. Lam Roger Kelly

WO 3 , though at first sight simply another example of an anisotropic oxide subject to bombardment-induced amorphization, has particular importance in that the depth of the amorphization (R a ) can be estimated with great accuracy. The procedure is based on preparing anodic WO 3 , crystallizing it on its metal substrate at 350 or 450 °C, bombarding it, and then making direct use of the brilliant interference colors. Only Kr impact was studied, the values of R a being found to lie in the region of 50 to 390 Å for Kr energies of 4 to 35 keV. It is argued that such values of R a can be used to deduce [Formula: see text], the mean damage range. One postulates that the fraction of atoms initially displaced at R a is unique but otherwise unspecified. This means that the quantity γ ≈ (Bt) exp (−ξ 2 /2), where Bt is the dose, ξ stands for [Formula: see text] and [Formula: see text] is the mean damage straggling, should be invariant for a given bombardment energy. In solving this equation advantage can be taken of the fact that the ratio [Formula: see text] tends to be constant (1.6 ± 0.2) for intermediate mass ratios and low energies. The result was a series of estimates of [Formula: see text] which could be shown to be closely similar to the exact Thomas–Fermi values of Winterbon.

10.1139/p72-255

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Citations (18)

Editorial: Announcement of new topical section—Organic Electronics and Photonics

Applied Physics Letters (2008)

N.Q. Lam

First Page

Section (typography)

10.1063/1.2835475

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Radiation-induced defect buildup and radiation-enhanced diffusion in a foil under energetic bombardment

Journal of Nuclear Materials (1975)

N.Q. Lam

Sink (geography)

radiation damage

Void (composites)

10.1016/0022-3115(75)90083-5

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Citations (23)

Generalized Melting Criterion for Amorphization

MRS Proceedings (1992)

Ram Devanathan N.Q. Lam P.R. Okamoto M. Meshii

Root mean square

Mean squared displacement

Constant (computer programming)

10.1557/proc-291-653

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Citations (1)

Dynamical Behavior of the Subsurface Region in Alloys Under Ion Bombardment at High Temperatures

MRS Proceedings (1981)

N.Q. Lam H. Wiedersich

Phenomenological model

10.1557/proc-7-35

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Citations (5)

Gibbsian Surface Segregation in cu-ni Alloys

Physical Review Letters (1986)

L.E. Rehn H. A. Hoff N.Q. Lam

10.1103/physrevlett.57.780

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Citations (23)

Editorial

Applied Physics Letters (2013)

N.Q. Lam

First Page

10.1063/1.4789587

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In-situ investigation of ion-implantation effects on radiation-induced segregation in Ni-Al alloys

Proceedings annual meeting Electron Microscopy Society of America (1996)

M. J. Giacobbe N.Q. Lam P.R. Okamoto Nestor J. Zaluzec James F. Stubbins

In-situ experiments using the HVEM (high voltage electron microscope)/Tandem accelerator facility at Argonne National Laboratory were performed to determine the effects of 400-keV Zr + and 75-keV Ne + implantation on electron radiation-induced segregation (RIS) in Ni-9at.%Al at 550°C and 450°C, respectively. The alteration of RIS kinetics by Ne implantation was studied at two different doses. A highly-focused 900-keV electron beam, which produces a radial defect flux away from the beam center, was used to induce segregation of Al atoms in the opposite direction via the inverse-Kirkendall effect. Within the irradiated zone, Al enrichment drives the formation of γ′-Ni 3 Al precipitates, and the radial segregation rate of Al was monitored by measuring the growth of the precipitate zone. When a thin film is subject to a focused, electron beam, a non uniform defect distribution is produced. The effective beam diameter, D ∘ , is defined by I T = I ∘ (πD ∘ /2) 2 where I T is the total electron current and I ∘ is the peak electron flux.

Kirkendall Effect

Acceleration voltage

Electron beam processing

radiation damage

10.1017/s0424820100167408

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In-Situ Hvem Studies of Radiation-Induced Segregation In Ni-Al Alloys During Simultaneous Irradiation with Electrons and Ions

MRS Proceedings (1995)

M. J. Giacobbe N.Q. Lam P.R. Okamoto James F. Stubbins

Kirkendall Effect

Electron beam processing

radiation damage

10.1557/proc-396-57

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Citations (1)