R. Radhakrishnan Sumathi

Leibniz Institute for Crystal Growth

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Kevin‐P. Gradwohl

Leibniz Institute for Crystal Growth

Alexander Gybin

Leibniz Institute for Crystal Growth

Uta Juda

Leibniz Institute for Crystal Growth

P. Gille

Ludwig-Maximilians-Universität München

N. V. Abrosimov

Leibniz Institute for Crystal Growth

J. Janicskó Csáthy

Technical University of Munich

T.K. Varadarajan

Indian Institute of Technology Madras

B. Viswanathan

Rajalakshmi Engineering College

Carsten Richter

Leibniz Institute for Crystal Growth

D. Schwabe

University of Giessen

Cooperative Institutions

Leibniz Institute for Crystal Growth

Technical University of Munich

Campbell Collaboration

Lawrence Berkeley National Laboratory

Oak Ridge National Laboratory

Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Gran Sasso

Centre National de la Recherche Scientifique

Triangle Universities Nuclear Laboratory

Joint Institute for Nuclear Research

Max Planck Institute for Physics

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Catalytic properties of BaPb 1-x Bi x O 3 perovskite oxide for partial oxidation of benzyl alcohol

INDIAN JOURNAL OF CHEMISTRY- SECTION A (1999)

R. Radhakrishnan Sumathi Kathryn C. Johnson B. Viswanathan T.K. Varadarajan

Benzyl alcohol

Partial oxidation

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Citations (1)

Selective oxidation of benzyl alcohol on BaPb1-xBixO3 and related perovskite oxides.

Studies in surface science and catalysis (1998)

R. Radhakrishnan Sumathi B. Viswanathan T.K. Varadarajan

Benzyl alcohol

Benzaldehyde

Benzoic acid

10.1016/s0167-2991(98)80381-9

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Citations (0)

High Purity Germanium Crystals for Detector Application - the Path Traveled so far and the Way Ahead

Proceedings of the nanoGe Fall Meeting19 (2019)

R. Radhakrishnan Sumathi Kevin‐P. Gradwohl O. Gybin J. Janicskó Csáthy N. V. Abrosimov

Semiconductor detector

10.29363/nanoge.nfm.2019.239

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Effect of Irradiation Induced Interface Defects on GaAs Schottky Diodes

SPIE eBooks (1998)

N. Dharmarasu S. Arulkumaran R. Radhakrishnan Sumathi P. Jayavel J. Kumar

The effect of low energy proton irradiation induced damage on the near interface of the Pd/n-GaAs Schottky Barrier Diodes (SBDs) has been studied using I-V and C-V characteristics. The reverse leakage current increases as a function of irradiation fluences. Annealing the irradiated SBDs helps to anneal out the irradiation induced defects. Annealing mechanism of the defects in the irradiated SBDs with different fluences are discussed. Unirradiated SBDs annealed at 673 K depict ohmic behavior, which is attributed to the formation of thin heavily doped GaAs layer at the interface. But for the annealed (673 K) irradiated SBDs, improved device characteristics has been observed when compared with the as irradiated device characteristics. A decrease in the capacitance has been observed in the irradiated and annealed SBDs for the fluences 1×10 14 , 1×10 15 and 1×10 16 p cm -2 . For higher incident particle fluences (1×10 15 and 1×10 16 p cm -2 ) an increase in the capacitance has been observed compared to 1×10 14 p cm -2 fluence.

Reverse leakage current

Deep-level transient spectroscopy

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An experimental and numerical effort to simulate the interface deflection of YAG

Journal of Crystal Growth (2004)

D. Schwabe R. Radhakrishnan Sumathi H. Wilke

Micro-pulling-down

Temperature Gradient

Crystal (programming language)

Deflection angle

Supercooling

10.1016/j.jcrysgro.2004.01.050

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Citations (17)

Recent advances in plant bioelectromagnetics

K.S.A. Gnanasekaran R. Radhakrishnan Sumathi M. Nagarajan

This review analyses the state-of-the-art in the field of bioelectromagnetics with respect to plant growth. The field induced had been either constant or pulsating, varying from weak to strong. This paper summarises the observations and discusses the possible mechanisms

Bioelectromagnetics

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Spectral and Thermal Degradation of Melamine Cyanurate

Journal of Materials (2013)

V. Sangeetha N. Kanagathara R. Radhakrishnan Sumathi N. Sivakumar G. Anbalagan

Melamine cyanurate, an organic crystalline complex was, synthesized by evaporation of an aqueous solution containing equimolar quantities of melamine and cyanuric acid. The synthesized compound has been subjected to various characterizations like Powder XRD, FT-IR, TG-DTG, SEM, and SHG. The presence of sharp diffraction peaks in the XRD confirms that the products are highly crystalline. The average particle size was calculated using the Debye-Scherrer formula, and it was found to be 3.067 μ m. Thermal behavior of the grown crystal has been studied by TG-DTG analysis. From TG-DTG, it is found that the title crystal possesses good thermal stability. The activation energy was calculated using the Broido, Coats-Redfern, and Horowitz-Metzger methods. A sharp peak exothermic peak at 405.40°C was assigned as the melting point of the title material. SEM reveals the morphology of the synthesized salt. No detectable signal was observed during the Kurtz-Perry technique.

Cyanuric acid

Thermal Stability

Crystal (programming language)

Powder Diffraction

10.1155/2013/262094

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Citations (41)

Acetobacter peroxydans based electrochemical biosensor for hydrogen peroxide

R. Radhakrishnan Sumathi Rajasekar Rathanasamy K.C. Narasimham

Hydrogen peroxide (H20 2) has a great ability to oxidize, bleach and sterilize. It is being used in diary industry, biotechnological processes, wastewater treatments etc. Hence the determination of H20 2 is of great importance in these fields. This paper describes microbial based bioelectrode, obtained by coupling immobilized living Acetobacter peroxydans (bacterial cells) to the amperometric oxygen electrode, for the determination of H20 The fabricated biosensor utilizes the amperometric sensing of oxygen produced r during the catalytic decomposition of H20 2 at the sensing electrode membrane interface. This sensor has a linear range of detection from 0.1 to 9.5 mM H20 2 with a response time (T 90) of 60s. The sensor performs well at ambient temperature and in the pH range of 5.0 to 8.0. The life period of the sensor is over 90 days. The assimilation studies with most of the organics such as sugars, aminoacids, alcohols, aldehydes etc expected to have no influence over the performance of the probe. The concentration of HzOz upto llmM is found to have no toxic effect on the sensor performances.

Amperometry

Clark electrode

Linear range

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Neutrinoless Double-Beta Decay

Advances in High Energy Physics (2012)

C. Adams K. Alfonso C. Andreoiu E. Angelico I. J. Arnquist

This paper introduces the neutrinoless double-beta decay (the rarest nuclear weak process) and describes the status of the research for this transition, both from the point of view of theoretical nuclear physics and in terms of the present and future experimental scenarios. Implications of this phenomenon on crucial aspects of particle physics are briefly discussed. The calculations of the nuclear matrix elements in case of mass mechanisms are reviewed, and a range for these quantities is proposed for the most appealing candidates. After introducing general experimental concepts—such as the choice of the best candidates, the different proposed technological approaches, and the sensitivity—we make the point on the experimental situation. Searches running or in preparation are described, providing an organic presentation which picks up similarities and differences. A critical comparison of the adopted technologies and of their physics reach (in terms of sensitivity to the effective Majorana neutrino mass) is performed. As a conclusion, we try to envisage what we expect round the corner and at a longer time scale.

Beta decay

10.1155/2012/857016

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Citations (204)

Native seeding and silicon doping in bulk growth of AlN single crystals by PVT method

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2014)

R. Radhakrishnan Sumathi

Abstract Homo‐epitaxial growth of AlN crystals using native seeds prepared from our hetero‐epitaxial AlN/SiC template crystals has been successfully carried out. Single crystals of acceptable structural properties with XRD‐RC FWHM of 150 arcsec, Raman E 2 (high) phonon mode FWHM of 9 cm ‐1 and with low concentrations of background impurities (below the detection limit of EPMA) were obtained. An effort has been made to obtain n‐type conductivity in the PVT grown AlN single crystals through intentional Si‐doping during bulk growth. The investigations using EPMA and micro‐Raman measurements confirm that it is possible to incorporate intentionally the Si atoms in the bulk AlN host lattice without any kind of Si inclusions or precipitates. Structural quality of the Si‐doped crystals was almost same as that of the native seed crystal. Si‐doping induces a compressive strain in the doped AlN crystals as seen from the 5 cm –1 shift (blue shift) in the Raman E 2 (high) peak position. EPR measurement gives first evidence of the presence of shallow level Si donor in the grown crystal, though the free‐carrier concentrations are quite low for a semiconductor doping. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Crystal (programming language)

10.1002/pssc.201300509

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Citations (16)