Junwei Chu

Xi'an Institute of Optics and Precision Mechanics

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Jie Xiong

Xiangtan University

Chuanhui Gong

Nantong University

Jianwen Huang

National Engineering Research Center of Electromagnetic Radiation Control Materials

Tianyu Lei

National Engineering Research Center of Electromagnetic Radiation Control Materials

Jun He

Central South University

Yao Wen

Wuhan University

Chunyang Wu

National Engineering Research Center of Electromagnetic Radiation Control Materials

Yanrong Li

University of Electronic Science and Technology of China

Lei Yin

Wuhan University

Xianfu Wang

University of Electronic Science and Technology of China

Cooperative Institutions

Chinese Academy of Sciences

University of Electronic Science and Technology of China

National Engineering Research Center of Electromagnetic Radiation Control Materials

University of Chinese Academy of Sciences

Suzhou Institute of Nano-tech and Nano-bionics

University of Science and Technology of China

Chengdu University

National Center for Nanoscience and Technology

Soochow University

Fudan University

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Hierarchically heterostructured metal hydr(oxy)oxides for efficient overall water splitting

Nanoscale (2019)

Yang Liu Fengmei Wang Tofik Ahmed Shifa Jie Li Jing Lei Tai

The design of highly efficient electrocatalysts containing non-precious metals is crucial for promoting overall water splitting in alkaline media. In particular, Janus catalysts simultaneously facilitating the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) are desirable. Herein, we fabricated a unique hierarchical heterostructure via growing Ni4W6O21(OH)2·4H2O (denoted as Ni-W-O) nanosheets on NiMoO4 rods, which was indispensable for regulating the morphology of the Ni-W-O structure. This heterostructure of Ni-W-O/NiMoO4 could be utilized as an electrocatalyst to realize superior activity for overall water splitting in 1.0 M KOH. It substantially promoted overall water splitting with 1.6 V at 30 mA cm-2, outperforming numerous bifunctional electrocatalysts under the same conditions. Notably, the remarkable stability for continuously splitting water endowed this hierarchical heterostructure with potential applications on a large scale. This work emphasizes the effectively controlled growth of heterostructured non-noble-metal catalysts for energy-conversion reaction.

Oxygen evolution

Noble metal

10.1039/c9nr02988e

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Citations (17)

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

Advanced Materials (2020)

Junwei Chu Yang Wang Xuepeng Wang Kai Hu Gaofeng Rao

Abstract The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices’ application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.

Valleytronics

10.1002/adma.202004469

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Citations (74)

Genetic engineering of porous sulfur species with molecular target prevents host passivation in lithium sulfur batteries

Energy storage materials (2019)

Tianyu Lei Yin Hu Wei Chen Weiqiang Lv Yu Jiao

Passivation

Deposition

10.1016/j.ensm.2019.12.036

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Citations (34)

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

Advanced Materials (2019)

Chuanhui Gong Junwei Chu Chujun Yin Chaoyi Yan Xiaozong Hu

2D planar structures of nonlayered wide-bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self-confined chemical vapor deposition method is described. The enhanced spin-triplet exciton (Zf , 2.98 eV) luminescence and polarization-enhanced second-harmonic generation based on the 2D CuBr flakes demonstrate the potential of short-wavelength luminescent applications. Solar-blind and self-driven ultraviolet (UV) photodetectors based on the as-synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W-1 , an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 1011 Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short-wavelength light-emitting devices, nonlinear optical devices, and UV photodetectors.

Ultraviolet

Quantum Efficiency

10.1002/adma.201903580

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Citations (76)

Van der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality

Advanced Functional Materials (2018)

Lei Yin Feng Wang Ruiqing Cheng Zhenxing Wang Junwei Chu

Abstract Controlling the conduction behavior of 2D materials is an important prerequisite to achieve their electronic and optoelectronic applications. However, most of the reported approaches are aware of the shortcomings of inflexibility and complexity, which limits the possibility of multifunctional integration. Here, taking advantage of van der Waals heterostructure engineering, a simple method to achieve a dynamically controlled binary channel in a semivertical MoTe 2 /MoS 2 field effect transistor is proposed. It is enabled by the high switchability between tunneling and thermal transports through simply changing the sign of voltage bias. In addition, the proposed system allows for multifunctional integration of transistor with on/off ratio >10 7 and diode with rectification ratio >10 6 . Moreover, the devices show screen capability to negative photoresponse effect that is widely observed in ambipolar materials, hence improving the photodetection reliability and sensitivity. This study broadens the functionalities of van der Waals heterostructures and opens up more possibilities to realize multifunctional devices.

Ambipolar diffusion

10.1002/adfm.201804897

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Citations (26)

Critical SiO2 nanolayers for improving corrosion resistance and lithium storage performances of core-shell nano-Si/C composites

Journal of Alloys and Compounds (2018)

Jian Xie Haiyan Zhang Junwei Chu Wei Shen Rong Chen

Carbon fibers

10.1016/j.jallcom.2018.08.086

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Citations (20)

Edge‐Epitaxial Growth of 2D NbS₂‐WS₂ Lateral Metal‐Semiconductor Heterostructures

Advanced Materials (2018)

Yu Zhang Lei Yin Junwei Chu Tofik Ahmed Shifa Jing Xia

Abstract 2D metal‐semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high‐frequency devices. Although, a series of p–n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS 2 on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS 2 ‐WS 2 lateral metal‐semiconductor heterostructures via a “two‐step” CVD method is realized. Both the lateral and vertical NbS 2 ‐WS 2 heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as‐grown NbS 2 ‐WS 2 heterostructures. The existence of the NbS 2 ‐WS 2 heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD‐based heterostructures and enlightens the possibility of applications based on 2D metal‐semiconductor heterostructures.

10.1002/adma.201803665

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Citations (121)

Quantum Enhanced Optical Phase Metrology Beyond the Standard Quantum Limit

2022 Photonics & Electromagnetics Research Symposium (PIERS) (2024)

Yilun Xue Bing Yu W.R. Xue Juan Chen Yan Li

Quantum Metrology

Quantum limit

Quantum sensor

Heisenberg limit

Atom optics

Quantum imaging

10.1109/piers62282.2024.10618235

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Citations (0)

CCDC 742301: Experimental Crystal Structure Determination

The Cambridge Structural Database (2010)

Bairu Shi S. Merten D.K.Y. Wong Junwei Chu Lok Lok Liu

An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

10.5517/ccsxf69

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2D Group IVB Transition Metal Dichalcogenides

Advanced Functional Materials (2018)

Chaoyi Yan Chuanhui Gong Peihua Wangyang Junwei Chu Kai Hu

Abstract Semiconductor technology is currently impaired by the surface dangling bond of materials, which introduces scattering and interface traps. 2D materials, especially transition metal dichalcogenides (TMDs) with different main groups, have settled this issue by utilizing unique atomically smooth surfaces and van der Waals (vdW) structures. Over the past few decades, many processes for exploring new materials, manipulating physical properties, and synthesizing single crystals have been developed. Among these 2D materials, group IVB TMDs are distinguished for their splendid physical properties, including ultrahigh mobility, charge density wave, superconducting transitions, etc. Here, the recent advances in group IVB TMDs are reviewed, which offer easy access to next generation nano‐, opto‐, thermal‐electronic, energy storage and conversion applications. Both the advantages and challenges of these studies are summarized to further clarify existing problems.

Dangling bond

10.1002/adfm.201803305

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Citations (101)