You-yuan Zhao

Fudan University

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Ming‐Yen Lu

National Tsing Hua University

Wen-bin Fan

Ministry of Health and Welfare

Le-jun Qi

Fudan University

Hai-tong Sun

China University of Petroleum, Beijing

Yu Yin

Shanghai Jiao Tong University

Yong‐Le Pan

DEVCOM Army Research Laboratory

Lingbing Chen

Shenzhen University

Fuming Li

Xinjiang Technical Institute of Physics & Chemistry

Ruisheng Wang

University of Calgary

Jing Zhou

Shanghai Institute of Technical Physics

Cooperative Institutions

Fudan University

Chinese Academy of Sciences

University of Chinese Academy of Sciences

Centre National de la Recherche Scientifique

Zhejiang University

Shenzhen University

Centre d’Élaboration de Matériaux et d’Études Structurales

Université de Toulouse

Université Toulouse III - Paul Sabatier

Universidad de Zaragoza

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A combined approach to fabricating Si nanocrystals with high photoluminescence intensity

Applied Surface Science (2008)

Zhiqiang Xie Jiang Zhu Miao Zhang You-yuan Zhao Ming‐Yen Lu

Passivation

Intensity

10.1016/j.apsusc.2008.10.052

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Citations (14)

Modulation of the photoluminescence of SrTiO₃(001) by means of fluorhydric acid etching combined with Ar⁺ion bombardment

Nanotechnology (2007)

Zheng-hao Li Hai-tong Sun Zhiqiang Xie You-yuan Zhao Ming‐Yen Lu

We report a method to modulate the photoluminescence (PL) of SrTiO3(001) at room temperature by fluorhydric (HF) acid etching and Ar+ ion bombardment. The PL of the virgin sample is in the blue/green range, which can be enhanced in intensity by a factor of 7.2 after being fully etched in HF acid with the peak shape being unchanged. Ar+ ion bombardment of SrTiO3 can blueshift the overall PL, and the peak maximum becomes centred at 403 nm. After fully etching the ion-bombarded sample in HF, the PL peak stays in the blue light range, but its intensity increases to 17.5 times that of the virgin one. Oxygen vacancies assumed to be produced on the lateral sides of SrTiO3 nanograins are responsible for the PL emissions, and their variations in number and nature are attributed to the PL modulation.

Blueshift

Intensity

Modulation (music)

10.1088/0957-4484/18/16/165703

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Citations (19)

Synergetic effect between ion energy and sample temperature in the formation of distinct dot pattern on Si(110) by ion-sputter erosion

Applied Surface Science (2005)

Weiqing Li Le-jun Qi Xinju Yang Ling Li Wen-bin Fan

10.1016/j.apsusc.2005.09.019

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Citations (6)

[Nonlinear optical absorption characteristics of a novel organic material ZnTBP/CA/PhR].

Luying Li You-yuan Zhao Shirui Yu Zheng Rui-zhi

The measurement of optical absorption spectrum in visible light range of a novel organic material Zn-tetrabenzoporphincrotonic acid/phenoxy resin (ZnTBP/CA/PhR) is reported in this paper. The nonlinear absorption property of the sample illuminated by lasers with different wavelengths was studied. And the absorption alteration and kinetic process of the major spectrum bands were observed. The saturation absorption (SA) and reverse saturation absorption (RSA) appeared as the input fluence increased, and re-reverse saturation absorption process of the material was demonstrated in the experiment. These properties occurred in a broad range of visible spectrum. The paper qualitatively analyses the physical mechanism during the whole course. Based on the nonlinear absorption characteristics, we showed some applications in photonics field of ZnTBP/CA/PhR.

Saturation (graph theory)

Visible spectrum

Source

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Strain in antimonide/arsenide multilayers for middle-IR systems

HAL (Le Centre pour la Communication Scientifique Directe) (2013)

J. Nicolaï Christophe Gatel B. Warot-Fonrose А. Н. Баранов R. Teissier

Antimonide

Strain (injury)

Arsenide

Source

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Modification of Si nanostructures on Si(100) by post ion milling

Nanotechnology (2006)

Wen-bin Fan Le-jun Qi Hai-tong Sun You-yuan Zhao Ming‐Yen Lu

We report a method to modify Si nanostructures on Si(100) by Ar+ ion sputtering, which we call post ion milling, or PIM. The effect of PIM on the nanodot modification was found to strongly depend on the value of ion flux utilized. For the ion flux of 80 µA cm−2 both the lateral and vertical dot sizes do not change significantly with the milling time, while for the ion flux of 15 µA cm−2 these sizes are dramatically reduced. The effect of PIM is attributed to a surface morphology transition process from a starting steady surface state to a target one. However, the final steady state surface morphology is not necessarily identical to the target one, but influenced by both the starting and target surface morphologies. Our results indicate that, given sufficiently low ion flux and low ion energy, very small nanostructures can be readily achieved via PIM.

Ion milling machine

10.1088/0957-4484/17/8/012

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Citations (6)

Study on dynamics of persistent spectral hole formation in frequency domain optical storage

17th Congress of the International Commission for Optics: Optics for Science and New Technology (1996)

You-yuan Zhao

A variety of studies on persistent spectral hole burning (PSHB) have been carried out for the last twenty years [1.2.3], since the discovery of this phenomena in 1974. The elucidation of electron-phonon interaction, the nature of zero-phonon line and spectral diffusion in PSHB have been studied intensively together with the research aiming at its possible applicability to ultra-high density optical information storage in frequency domain.

Spectral hole burning

Optical storage

Line (geometry)

10.1117/12.2316150

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Multiple Photon-Gated Persistent Spectral Holes Burnt over A Whole Absorption Band in A New System of Frequency-Domain Optical Storage Material

You-yuan Zhao Yong‐Le Pan Yu Yin Lingbing Chen Ruisheng Wang

Persistent spectral hole burning(PSHB) permits use of the frequency domain for achieving ultrahigh-density optical information storage in which the presence of a spectral hole at a particular laser frequency utilized to encode much many bits within a single focused laser spot. The ultimate storage density of the three-dimensional(x,y,f) optical memories can be increased to 10 9 -10 11 bits/cm 2 [1].

Optical storage

10.1364/shbs.1994.wd27

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A refined Ehrlich–Schwoebel effect on the modification of Si surface nanostructures by post ion milling

Applied Surface Science (2007)

Jing Zhou Wen-bin Fan Wenbin Chen You-yuan Zhao Ming‐Yen Lu

Nanodot

Surface Modification

10.1016/j.apsusc.2007.09.009

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Citations (2)