Che‐Yi Lin

National Chung Hsing University

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Yen‐Fu Lin

National Chung Hsing University

Mengjiao Li

Shanghai University

Shih‐Hsien Yang

National Cheng Kung University

Chenhsin Lien

National Tsing Hua University

Yuan‐Ming Chang

Tamkang University

Feng‐Shou Yang

National Tsing Hua University

Ko‐Chun Lee

National Tsing Hua University

Wenwu Li

Fudan University

Ching‐Hwa Ho

National Taiwan University of Science and Technology

Po‐Wen Chiu

National Tsing Hua University

Cooperative Institutions

National Chung Hsing University

National Yang Ming Chiao Tung University

National Taiwan University

East China Normal University

National Tsing Hua University

National Cheng Kung University

National Taipei University

National Institute for Materials Science

Tsinghua University

United Microelectronics (Taiwan)

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Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor

Advanced Functional Materials (2020)

Mengjiao Li Feng‐Shou Yang Hung‐Chang Hsu Wan‐Hsin Chen Chia Nung Kuo

Abstract Defect engineering represents a significant approach for atomically thick 2D semiconductor material development to explore the unique material properties and functions. Doping‐induced conversion of conductive polarity is particularly beneficial for optimizing the integration of layered electronics. Here, controllable doping behavior in palladium diselenide (PdSe 2 ) transistor is demonstrated by manipulating its adatom‐vacancy groups. The underlying mechanisms, which originate from reversible adsorption/desorption of oxygen clusters near selenide vacancy defects, are investigated systematically via their dynamic charge transfer characteristics and scanning tunneling microscope analysis. The modulated doping effect allows the PdSe 2 transistor to emulate the essential characteristics of photo nociceptor on a device level, including firing signal threshold and sensitization. Interestingly, electrostatic gating, acting as a neuromodulator, can regulate the adaptive modes in nociceptor to improve its adaptability and perceptibility to handle different danger levels. An integrated artificial nociceptor array is also designed to execute unique image processing functions, which suggests a new perspective for extension of the promise of defect engineered 2D electronics in simplified sensory systems toward use in advanced humanoid robots and artificial visual sensors.

Electronic Skin

10.1002/adfm.202007587

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Citations (27)

InSe Tribotronic Transistors: Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics (Adv. Funct. Mater. 19/2019)

Advanced Functional Materials (2019)

Mengjiao Li Feng‐Shou Yang Yung‐Chi Hsiao Che‐Yi Lin Hsing‐Mei Wu

Tribotronics is believed to be a promising technology to drive electronics by external stimulation. In article number 1809119, Wenwu Li, Yen-Fu Lin, Ying-Chih Lai, and co-workers demonstrate a low-voltage operational, integratable, powering saving, and high sensitivity tactile sensor based on a InSe tribotronic transistor. The ultrahigh on/off current modulation and extraordinarily low operation voltage of the 2D-layered user-interactive system set new records for smart tribotronics, which could benefit the progress of 2D material devices for potential applications in smart interfaces.

Modulation (music)

Flexible Electronics

Tactile sensor

10.1002/adfm.201970125

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A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

Nature Electronics (2023)

Meng‐Yu Tsai Chia-Tse Huang Che‐Yi Lin Mu‐Pai Lee Feng‐Shou Yang

XNOR gate

10.1038/s41928-023-01034-7

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Citations (51)

Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts

Scientific Reports (2019)

Jiayi Li Ko‐Chun Lee Meng-Hsun Hsieh Shih‐Hsien Yang Yuan‐Ming Chang

Abstract In the present study, we aim to help improve the design of van der Waals stacking, i.e., vertical 2D electronics, by probing charge transport differences in both parallel and vertical conducting channels of layered molybdenum disulfide (MoS 2 ), with thin graphite acting as source and drain electrodes. To avoid systematic errors and variable contact contributions to the MoS 2 channel, parallel and vertical electronics are all fabricated and measured on the same conducting material. Large differences in the on/off current ratio, mobility, and charge fluctuations, between parallel and vertical electronics are evident in electrical performance as well as in charge transport mechanisms. Further insights are drawn from a well-constrained analysis of both temperature-dependent current-voltage characteristics and low-frequency (LF) current fluctuations. This work offers significant insight into the fundamental understanding of charge transport and the development of future layered-materials-based integration technology.

Molybdenum disulfide

10.1038/s41598-019-56576-8

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Citations (2)

Two-dimensional MoTe

Japanese Journal of Applied Physics (2016)

Yuan‐Ming Chang Che‐Yi Lin Yen‐Fu Lin Kazuhito Tsukagoshi

Source

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Negative-Differential-Resistance Devices Achieved by Band-Structure Engineering in Silicene under Periodic Potentials

Physical Review Applied (2018)

Chang-Hung Chen Wenwu Li Yuan‐Ming Chang Che‐Yi Lin Shih‐Hsien Yang

In terms of band-gap engineering for devices, despite silicene's great promise, it has received considerably less attention than its carbon cousin graphene. Taking advantage of its tunable band gap, the authors use an effective Hamiltonian formalism to examine the formation of silicene superlattices. They theoretically consider engineering of the local band structure of silicene through application of an out-of-plane electric field, together with control over the spin and valley degrees of freedom, and finally show how to optimize negative differential resistance. This design principle could be extended to stacks of other two-dimensional materials as well.

Hamiltonian (control theory)

10.1103/physrevapplied.10.044047

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Citations (25)

Reversible and Precisely Controllable p/n‐Type Doping of MoTe₂ Transistors through Electrothermal Doping

Advanced Materials (2018)

Yuan‐Ming Chang Shih‐Hsien Yang Che‐Yi Lin Chang‐Hung Chen Chenhsin Lien

Abstract Precisely controllable and reversible p/n‐type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E‐doping) processes. E‐doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n‐type) doping and exposure to air, which induces hole (p‐type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n‐type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E‐doping processes of MoTe 2 , E‐doping is a simple and efficient method. Moreover, through exact manipulation of p/n‐type doping of MoTe 2 transistors, quasi‐complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E‐doping, adopted in obtaining p/n‐type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance.

10.1002/adma.201706995

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Citations (81)

Performance Limits and Potential of Multilayer Graphene–Tungsten Diselenide Heterostructures

Advanced Electronic Materials (2021)

Shih‐Hsien Yang Feng‐Shou Yang Hao‐Ling Tang Ming‐Hui Chiu Ko‐Chun Lee

Abstract Atomically thin tungsten diselenide (WSe 2 ) transistors with multilayer graphene (w/ G) as contact electrodes are successfully fabricated by a precise area‐controllable chemical vapor deposition method. The performance and electrical properties of the devices are explored. Compared to those of WSe 2 transistors without graphene contacts (w/o G), the maximum current densities of the w/ G–WSe 2 transistors increase by one to two orders of magnitude. In addition, the device performance is markedly improved for the w/ G–WSe 2 transistors, including an on/off current ratio of ≈10 7 , subthreshold swing of ≈150 mV/decade, and threshold voltage of ≈1.75 V. The improved performance of the w/ G–WSe 2 transistors is ascribed to the alleviation of electrical contributions from metal–semiconductor contact resistance, which is consistent with the analysis of low‐frequency noise measurements. In addition, self‐trapping behavior in the WSe 2 channel is found, which possibly paves a way to further optimize the performance of layered devices. Finally, an inverter using the w/ G–WSe 2 transistors is demonstrated. These transistors represent a step forward in the development of layered graphene‐based electronics suitable for energy‐efficient and high‐performance industrial‐scale products.

Tungsten diselenide

Contact resistance

10.1002/aelm.202100355

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Citations (2)

High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

Advanced Materials (2018)

Mengjiao Li Che‐Yi Lin Shih‐Hsien Yang Yuan‐Ming Chang Jen‐Kuei Chang

Abstract Tunability and stability in the electrical properties of 2D semiconductors pave the way for their practical applications in logic devices. A robust layered indium selenide (InSe) field‐effect transistor (FET) with superior controlled stability is demonstrated by depositing an indium (In) doping layer. The optimized InSe FETs deliver an unprecedented high electron mobility up to 3700 cm 2 V −1 s −1 at room temperature, which can be retained with 60% after 1 month. Further insight into the evolution of the position of the Fermi level and the microscopic device structure with different In thicknesses demonstrates an enhanced electron‐doping behavior at the In/InSe interface. Furthermore, the contact resistance is also improved through the In insertion between InSe and Au electrodes, which coincides with the analysis of the low‐frequency noise. The carrier fluctuation is attributed to the dominance of the phonon scattering events, which agrees with the observation of the temperature‐dependent mobility. Finally, the flexible functionalities of the logic‐circuit applications, for instance, inverter and not‐and (NAND)/not‐or (NOR) gates, are determined with these surface‐doping InSe FETs, which establish a paradigm for 2D‐based materials to overcome the bottleneck in the development of electronic devices.

Electron Mobility

Noise margin

Contact resistance

10.1002/adma.201803690

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Citations (131)

Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

npj 2D Materials and Applications (2021)

Qianfan Nie Caifang Gao Feng‐Shou Yang Ko‐Chun Lee Che‐Yi Lin

Abstract Recently, researchers have focused on optoelectronics based on two-dimensional van der Waals materials to realize multifunctional memory and neuron applications. Layered indium selenide (InSe) semiconductors satisfy various requirements as photosensitive channel materials, and enable the realization of intriguing optoelectronic applications. Herein, we demonstrate InSe photonic devices with different trends of output currents rooted in the carrier capture/release events under various gate voltages. Furthermore, we reported an increasing/flattening/decreasing synaptic weight change index (∆ W n ) via a modulated gate electric field, which we use to imitate medicine-acting metaplasticity with effective/stable/ineffective features analogous to the synaptic weight change in the nervous system of the human brain. Finally, we take advantage of the low-frequency noise (LFN) measurements and the energy-band explanation to verify the rationality of carrier capture-assisted optoelectronics applied to neural simulation at the device level. Utilizing optoelectronics to simulate essential biomedical neurobehaviors, we experimentally demonstrate the feasibility and meaningfulness of combining electronic engineering with biomedical neurology.

10.1038/s41699-021-00241-0

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Citations (11)